|Date:||Wed, March 1, 2017|
|Place:||Research I Seminar Room|
Abstract: Numerical modeling of temporal and spatial pattern formation in the planar layered system consisting of a DC driven planar gas discharge layer coupled to high-ohmic semiconductor layer is carried out in 1D and 2D Cartesian geometry. The model includes continuity equations for ions and electrons, the Poisson equation for the gas discharge layer, the equation for the electric field in the semiconductor, and the equation for the gas temperature. Calculations are carried out at very low currents and under cryogenic conditions using COMSOL and MATLAB. The Scharfetter-Gummel method is used for implementation on MATLAB.
First, complete model is defined. Next, factors that can cause the pattern formation is considered. Finally, bifurcations using the Lorenz map are discussed and the results are summarized.